RESEARCH OF INTERRELATION OF A DESIGN AND MANUFACTURING TECHNIQUES OF SEMI-CONDUCTOR DEVICES WITH THEIR PENETRATIVE PRESSURE
https://doi.org/10.21822/2073-6185-2013-0-1(28)-26-31
Abstract
The estimation of influence of a design and technology of formation of transistor structure on value of penetrative pressure is spent. Dependences in SAD TCAD Synopsys for penetrative pressure from size of a superficial charge of various designs of the transistor are received.
References
1. Исмаилов Т.А., Шахмаева А.Р. Транзисторные структуры силовой электроники.- Спб.: Политехника, 2011. – 126 с.
2. B.S. Avset, L. Evensen The effect of metal field plates on multiguard structures with
3. floating p+ guard rings// Nuclear Instruments and Methods in Physics Research, 1996. Vol. 377.
4. P. 397-403.
5. Малеев С.А. и др. Проектирование на ЭВМ ограничительных колец с учётом заряда
6. в диэлектрике// Электронная техника. Полупроводниковые приборы., - М.: 2007. M.S. Adler, V.A.K. Temple, A.F. Ferro Theory and Breakdown Voltage for Planar Devices with a Single Field Limiting Ring// IEEE Transactions on electron Devices, 1997. Vol. ED 24. No 2. P. 107-112
Review
For citations:
Shakhmaeva A.R. RESEARCH OF INTERRELATION OF A DESIGN AND MANUFACTURING TECHNIQUES OF SEMI-CONDUCTOR DEVICES WITH THEIR PENETRATIVE PRESSURE. Herald of Dagestan State Technical University. Technical Sciences. 2013;28(1):26-31. (In Russ.) https://doi.org/10.21822/2073-6185-2013-0-1(28)-26-31
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