THE MAIN METHODS OF FORMATION OF OXIDE LAYERS IN THE PRODUCTION OF SEMICONDUCTOR DEVICES AND IP
https://doi.org/10.21822/2073-6185-2013-29-2-26-33
Abstract
Film silicon oxide plays an important role in the process of creating silicon structures and semiconductor devices. The article is devoted to methods of formation of oxide layers, which
include: thermal oxidation, anodizing in electrolytes, pyrolytic deposition (deposition from the gas phase and plasma anodizing or oxidation.
About the Author
B. A. Shangereeva
Дагестанский государственный технический университет
Russian Federation
Russian Federation
References
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3. Технология полупроводниковых и диэлектрических материалов Ю.М. Таиров В.Ф.Цветков Москва «Высшая школа» 1990г
Review
For citations:
Shangereeva B.A. THE MAIN METHODS OF FORMATION OF OXIDE LAYERS IN THE PRODUCTION OF SEMICONDUCTOR DEVICES AND IP. Herald of Dagestan State Technical University. Technical Sciences. 2013;29(2):26-33. (In Russ.) https://doi.org/10.21822/2073-6185-2013-29-2-26-33
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