RESEARCH AND THE ANALYSIS OF CHANGE OF PARAMETERS IN THE CHANNEL OF AVERAGE HIGH-VOLTAGE BIPOLAR STATIC INDUCTION TRANSISTOR
https://doi.org/10.21822/2073-6185-2013-29-2-15-21
Abstract
When developing a technology of power device’s structure generation the breakdown voltage and the resistance of silicon substrate are constitutive parameters. Modern generation methods allow to create a structure based on fragile materials which behavior directly depends on the breakdown voltage and the resistance of chosen materials in the depth of structure. In this paper the work on determination the crystal’s channel resistance dependence of its structural parameters for the average high-voltage BSIT is done.
About the Author
P. R. Zakharova
Дагестанский государственный технический университет
Russian Federation
Russian Federation
References
1. Дудар Н.Л. Моделирование кремниевого транзистора со статической индукцией: Сборник тезисов докладов научно-технической конференции БГУИР №2. – Минск, 2005 г.
2. Отечественные транзисторы: БСИТ, СИТ, БТИЗ. - М.: Издательский дом «Додэка-ХХI», 2001. - 64 с.
3. Барыбин А.А. Электроника и микроэлектроника. Физико-технологические основы.- М.: Физматлит, 2006.-424с.
Review
For citations:
Zakharova P.R. RESEARCH AND THE ANALYSIS OF CHANGE OF PARAMETERS IN THE CHANNEL OF AVERAGE HIGH-VOLTAGE BIPOLAR STATIC INDUCTION TRANSISTOR. Herald of Dagestan State Technical University. Technical Sciences. 2013;29(2):15-21. (In Russ.) https://doi.org/10.21822/2073-6185-2013-29-2-15-21
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