A THERMOELECTRIC SEMICONDUCTOR DEVICE WITH A HIGH TEMPERATURE GRADIENT
https://doi.org/10.21822/2073-6185-2013-29-2-7-11
Abstract
In the article the thermoelectric device, which heated junctions spatially distant from the cold junctions to reduce parasitic losses between the conductive junctions.
About the Authors
S. M. Gadjiyevа
Дагестанский государственный техническый университет
Russian Federation
Russian Federation
D. A. Chelushkin
Дагестанский государственный техническый университет
Russian Federation
Russian Federation
References
1. Анатычук Л.И. Термоэлектричество Т2. – Киев: Букрек, 2003. – 386 с.
2. Патент РФ, № 2335825. Термоэлектрическое устройство с высоким градиентом
3. температур/Исмаилов Т.А., Гаджиев Х.М., Гаджиева С.М. Опубл. 10.10.2008. Бюл. 28.
Review
For citations:
Gadjiyevа S.M., Chelushkin D.A. A THERMOELECTRIC SEMICONDUCTOR DEVICE WITH A HIGH TEMPERATURE GRADIENT. Herald of Dagestan State Technical University. Technical Sciences. 2013;29(2):7-11. (In Russ.) https://doi.org/10.21822/2073-6185-2013-29-2-7-11
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