TECHNOLOGY OF MANUFACTURING OF TRANSISTOR STRUCTURES POWER ELECTRONICS

Abstract

It is proved that a prospective direction of electronic power development are intelligent power components: integrated power ICS and modules. Power electronic devices in the field of switched currents up to 50 A are arranged. The results of the semiconductor structures manufacturing technology study, field effect transistor type KP 961 are summarized. The manufacturing technology optimization problem of the transistor structures for power electronics to improve the output characteristics and reliability of the device has been solved. Special attention is paid to the reliability increasing methods, stability and durability of transistors in various modes and operating conditions. To improve the technology some computational model for the stock and the sealing areas formation have been obtained as well as experimental studies have been carried out. Optimised process stages of the transistor structure formation have been proposed. The charts on the structures of transistors grown at the given technology have been made. The manufacturing technology route structure of a field effect transistor of the KP 961 type has been developed.