SVETOTRANZISTOR
https://doi.org/10.21822/2073-6185-2013-0-1(28)-7-10
Abstract
In this article the opportunity to form a pn-junction bipolar transistor as a light-emitting, which will increase the degree of integration of large scale integrated circuits by reducing heat gain.
About the Authors
T. A. IsmailovRussian Federation
H. M. Gadjiyev
Russian Federation
S. M. Gadjiyevа
Russian Federation
T. D. Nezhvedilov
Russian Federation
T. A. Chelushkina
Russian Federation
Review
For citations:
Ismailov T.A., Gadjiyev H.M., Gadjiyevа S.M., Nezhvedilov T.D., Chelushkina T.A. SVETOTRANZISTOR. Herald of Dagestan State Technical University. Technical Sciences. 2013;28(1):7-10. (In Russ.) https://doi.org/10.21822/2073-6185-2013-0-1(28)-7-10
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