THERMOELECTRIC PROCESSES IN AN EFFICIENT LIGHT-EMITTING TRANSISTOR
https://doi.org/10.21822/2073-6185-2019-46-3-8-19
Abstract
Objectives Development of energy-efficient light-emitting bipolar semiconductor structures.
Method A method for transforming thermoelectric heat in bipolar semiconductor structures into optical-range electromagnetic radiation, which preserves the cooling effect on thermoelectric transitions, is proposed. Instead of transferring the information impulse electrically from the baseemitter light-emitting transition, the information is transferred directly to the light-absorbing basecollector transition by photons or following multiple re-reflections from mirror metal electrodes.
Results Unlike conventional optocouplers discretely separated in space, the novel optocouplers described in the article are integrated into a single electronic component using the principle of LED radiation. As a result, light-emitting bipolar semiconductor structures will result in the creation of more powerful, faster and better integrated devices.
Conclusion Light-emitting bipolar semiconductor structures will not only increase the reliability of electronic components across a wide range of performance characteristics, but also increase energy efficiency through the use of optical radiation recovery. The future development of light-efficient transistors improves integration and increases processor performance, at the same time as reducing the power consumption of the cooling system and the power supply of the device itself.
About the Authors
H. M. Gadzhiev
Daghestan State Technical University
Russian Federation
Russian Federation
Cand.Sci. (Technical), Аssoc. Prof., Department of Radio Engineering, Telecommunications and Microelectronics
70 I. Shamilya Ave., Makhachkala 367026
M. E. Akhmedov
Daghestan State Technical University
Russian Federation
Russian Federation
Dr. Sci. (Technical), Аssoc. Prof., Department of Technology of Food Production, Catering and Commodity Science
70 I. Shamilya Ave., Makhachkala 367026
S. M. Gadzhieva
Daghestan State Technical University
Russian Federation
Russian Federation
Cand.Sci. (Physical and Mathematical), Department of Theoretical and General Electrical Engineering
70 I. Shamilya Ave., Makhachkala 367026
P. A. Kurbanova
Daghestan State Technical University
Russian Federation
Russian Federation
Senior Lecturer, Department of Theoretical and General Electrical Engineering
70 I. Shamilya Ave., Makhachkala 367026
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Review
For citations:
Gadzhiev H.M., Akhmedov M.E., Gadzhieva S.M., Kurbanova P.A. THERMOELECTRIC PROCESSES IN AN EFFICIENT LIGHT-EMITTING TRANSISTOR. Herald of Dagestan State Technical University. Technical Sciences. 2019;46(3):8-19. (In Russ.) https://doi.org/10.21822/2073-6185-2019-46-3-8-19
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