STRUCTURAL AND TECHNOLOGICAL PARAMETERS AFFECTING THE BIPOLAR STATIC INDUCTION TRANSISTOR (BSIT ) RESISTANCE
https://doi.org/10.21822/2073-6185-2016-42-3-83-91
Abstract
Aim. The aim of the study is to determine the impact of structural and technological parameters on the resistance of the bipolar static induction transistor.
Methods. The paper provides a comparative analysis of the advantages of bipolar static induction transistor compared to the bipolar power transistors, MOSFETs and insulated-gate bipolar transistor (IGBT). Considered are structural and technological parameters that influence the resistance of BSIT-transistor.
Result. As a result of experimental study on silicon substrates were formed test prototypes of BSIT transistor structure, are presented calculation and experimental works. Obtained are the resistance dependencies of the transistor cell on the thickness of the epitaxial film; the resistance dependencies of BSIT transistor cell on the effective gate length for different values of the impurity concentration in the epitaxial film; dependencies resistance of the transistor cell on the gate length at different values of the epitaxial film thickness; the resistance dependencies of BSIT transistor cell on the distance between the mask for the p-region and the gate; dependencies on the multiplication the cell resistance by its area on the gate length.
Conclusion. When increasing the gate length (Lk) and the mask length for the p-region (lp +) in the transistor structure, the resistance decreases and the dependence of multiplication of the cell resistance by its area Q on the gate length has this case the minimum.
About the Authors
T. A. Ismailov
Daghestan State Technical University
Russian Federation
Russian Federation
doctor of technical Sciences, Professor, head of Department of theoretical and General electrical engineering, the rector, Honored worker of science of the Russian Federation,
70 I. Shamil Ave, Makhachkala, 367015
A. R. Shakhmaeva
Daghestan State Technical University
Russian Federation
Russian Federation
candidate of technical Sciences, Dean of Faculty training and retraining, Associate Professor of Department of Software computer technology and automated systems,
70 I. Shamil Ave, Makhachkala, 367015
B. A. Shangereeva
Daghestan State Technical University
Russian Federation
Russian Federation
candidate of technical Sciences, associate Professor of Department of theoretical and General electrical engineering,
70 I. Shamil Ave, Makhachkala, 367015
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Review
For citations:
Ismailov T.A., Shakhmaeva A.R., Shangereeva B.A. STRUCTURAL AND TECHNOLOGICAL PARAMETERS AFFECTING THE BIPOLAR STATIC INDUCTION TRANSISTOR (BSIT ) RESISTANCE. Herald of Dagestan State Technical University. Technical Sciences. 2016;42(3):83-91. (In Russ.) https://doi.org/10.21822/2073-6185-2016-42-3-83-91
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