DEVELOPMENT OF CONTROLLED RECTIFIERS BASED ON THE BIPOLAR WITH STATIC INDUCTION TRANSISTORS (BSIT)
https://doi.org/10.21822/2073-6185-2016-42-3-34-44
Abstract
Aim. The aim of this study is to develop one of the most perspective semiconductor device suitable for creation and improvement of controlled rectifiers, bipolar static induction transistor.
Methods. Considered are the structural and schematic circuit controlled rectifier based on bipolar static induction transistor (BSIT), and the criterion of effectiveness controlled rectifiers - equivalent to the voltage drop.
Results. Presented are the study results of controlled rectifier layout on BSIT KT698I. It sets the layout operation at an input voltage of 2.0 V at a frequency up to 750 kHz. The efficiency of the studied layouts at moderate current densities as high as 90 % .Offered is optimization of technological route microelectronic controlled rectifier manufacturing including BSIT and integrated bipolar elements of the scheme management.
Conclusion. It is proved that the most efficient use of the bipolar static induction transistor occurs at the low voltage controlled rectifiers 350-400 kHz, at frequencies in conjunction with a low-voltage control circuit.It is proved that the increase of the functional characteristics of the converters is connected to the expansion of the input voltage and output current ranges
Keywords
About the Authors
F. I. Bukashev
Novgorod State University
Russian Federation
Russian Federation
candidate of technical Sciences, lecturer of the Department of designing and technology of radio equipment,
41 d. Bolshaya Sankt-Peterburgskaya, Veliky Novgorod, 173003
A. R. Shakhmaeva
Daghestan State Technical University
Russian Federation
Russian Federation
candidate of technical Sciences, Dean of Faculty training and retraining, Associate Professor of Department of Software computer technology and automated systems,
70 I. Shamil Ave, Makhachkala, 367015
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Review
For citations:
Bukashev F.I., Shakhmaeva A.R. DEVELOPMENT OF CONTROLLED RECTIFIERS BASED ON THE BIPOLAR WITH STATIC INDUCTION TRANSISTORS (BSIT). Herald of Dagestan State Technical University. Technical Sciences. 2016;42(3):34-44. (In Russ.) https://doi.org/10.21822/2073-6185-2016-42-3-34-44
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